Latest News
  • 0
  • 1
  • 2
prev
next

Development engineer SiC material

Fairchild is hiring a Development engineer silicon carbide ...

Electronic design engineer

Fairchild is hiring a Electronic design engineer (role ...

Development engineer SiC components

Fairchild is hiring a Development engineer silicon carbide ...

TranSiC successfully designs SiC Power Modules for High Power Applications

 

TranSiC has successfully completed a three year development project supported by Vinnova and Energimyndigheten (the Swedish Energy Agency). The project consisted of three parties: TranSiC AB, KTH School of ICT and Acreo AB all located in Kista Sweden. The project’s aim is to design and manufacture devices and modules to enable energy efficient and compact power electronic systems. The goal of the project was to verify the device designs for the proposed technology platforms, in particular switching power designs has been reached. Typical applications for these devices and modules are found in Hybrid Electrical Vehicles.

The results of the project include a state of the art 1200V SiC power module, consisting of six BitSiC power transistors and six diodes. The module exhibits state of the art performance with on state losses of 1.15 V at 100 A and room temperature. At an elevated temperature of 150°C, the TranSiC power module exhibits low losses of 1.75 V at 100 A. Specific on-resistance of the module is at a very competitive 3.1 mΩcm2 at room temperature.

“These results prove that TranSiC has the necessary competence and capability to design and manufacture SiC devices and modules with very high performances. With very low losses at high voltage ratings, SiC bipolar transistors have a good opportunity of becoming a standard solution in high power applications” says Mats Reimark CEO of Transic in reflection of the presented results.

For more information about the project and about TranSiC and its high performance power transistors in Silicon Carbide, please contact Mats Reimark, CEO of TranSiC: This e-mail address is being protected from spambots. You need JavaScript enabled to view it
 

SiC Module

 
30 August 2011, 00.00
30 August 2011, 00.00
30 August 2011, 00.00
11 April 2011, 00.00
11 April 2011, 00.00
11 November 2010, 15.00
18 January 2010, 08.47